Category:
Power MOSFET
Dimensions:
6.73 x 2.39 x 6.22mm
Maximum Continuous Drain Current:
6.6 A
Transistor Material:
Si
Width:
2.39mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
4V
Package Type:
IPAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
27 nC @ 10 V
Channel Type:
P
Typical Input Capacitance @ Vds:
350 pF@ 25 V
Length:
6.73mm
Pin Count:
3
Typical Turn-Off Delay Time:
28 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
40 W
Series:
HEXFET
Maximum Gate Source Voltage:
±20 V
Height:
6.22mm
Typical Turn-On Delay Time:
14 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
480 mΩ
