Category:
Power MOSFET
Dimensions:
5.45 x 5.05 x 0.6mm
Maximum Continuous Drain Current:
27 A
Transistor Material:
Si
Width:
5.05mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.35V
Maximum Drain Source Resistance:
3 mΩ
Package Type:
DirectFET MX
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.35V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
33 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
4404 pF @ 15 V
Length:
5.45mm
Pin Count:
7
Typical Turn-Off Delay Time:
23 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.8 W
Series:
DirectFET, HEXFET
Maximum Gate Source Voltage:
±20 V
Height:
0.6mm
Typical Turn-On Delay Time:
11 ns
Minimum Operating Temperature:
-40 °C
