Category:
Power MOSFET
Maximum Continuous Drain Current:
17 A
Transistor Material:
Si
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
4V
Package Type:
D2PAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
37 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
920 pF@ 25 V
Pin Count:
3
Typical Turn-Off Delay Time:
35 ns
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
3.8 W
Series:
HEXFET
Maximum Gate Source Voltage:
±20 V
Height:
4.83mm
Typical Turn-On Delay Time:
9.2 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
90 mΩ
