Category:
Power MOSFET
Maximum Continuous Drain Current:
170 A
Transistor Configuration:
Single
Maximum Drain Source Voltage:
75 V
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
5 mΩ
Package Type:
TO-262
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
180 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
7500 pF @ 25 V
Pin Count:
3
Typical Turn-Off Delay Time:
97 ns
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
300 W
Series:
HEXFET
Maximum Gate Source Voltage:
±20 V
Height:
10.54mm
Typical Turn-On Delay Time:
19 ns
Minimum Operating Temperature:
-55 °C
This is N-channel MOSFET Transistor 170 A 75 V HEXFET 3-Pin TO-262 manufactured by Infineon. The manufacturer part number is IRF2907ZLPBF. It is of power mosfet category . While 170 a of maximum continuous drain current. The product offers single transistor configuration. It has a maximum of 75 v drain source voltage. The product carries 4v of maximum gate threshold voltage. It provides up to 5 mω maximum drain source resistance. The package is a sort of to-262. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 180 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 7500 pf @ 25 v . It contains 3 pins. Whereas, its typical turn-off delay time is about 97 ns . The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 300 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 10.54mm. In addition, it has a typical 19 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c.
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