Category:
Power MOSFET
Dimensions:
10.36 x 4.57 x 15.95mm
Maximum Continuous Drain Current:
90 A
Transistor Material:
Si
Width:
4.57mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
98 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
8000 pF @ 30 V
Length:
10.36mm
Pin Count:
3
Forward Transconductance:
121S
Typical Turn-Off Delay Time:
40 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
188 W
Series:
OptiMOS 3
Maximum Gate Source Voltage:
±20 V
Height:
15.95mm
Typical Turn-On Delay Time:
30 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
4 mΩ
