Infineon IPD25CN10NG N-channel MOSFET, 35 A, 100 V OptiMOS 2, 3-Pin TO-252

IPD25CN10NG Infineon  N-channel MOSFET, 35 A, 100 V OptiMOS 2, 3-Pin TO-252
IPD25CN10NG
Infineon

Product Information

Category:
Power MOSFET
Dimensions:
6.73 x 6.22 x 2.41mm
Maximum Continuous Drain Current:
35 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-252
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
23 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1560 pF @ 50 V
Length:
6.73mm
Pin Count:
3
Typical Turn-Off Delay Time:
13 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
71 W
Series:
OptiMOS 2
Maximum Gate Source Voltage:
±20 V
Height:
2.41mm
Typical Turn-On Delay Time:
10 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
26 mΩ
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This is N-channel MOSFET 35 A 100 V OptiMOS 2 3-Pin TO-252 manufactured by Infineon. The manufacturer part number is IPD25CN10NG. It is of power mosfet category . The given dimensions of the product include 6.73 x 6.22 x 2.41mm. While 35 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.22mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of to-252. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 23 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 1560 pf @ 50 v . Its accurate length is 6.73mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 13 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 71 w maximum power dissipation. The product optimos 2, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 2.41mm. In addition, it has a typical 10 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 26 mω maximum drain source resistance.

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IPx26CN10N-G OptiMOS2 Power-Transistor(Technical Reference)

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