Category:
Power MOSFET
Dimensions:
10.36 x 4.52 x 9.45mm
Maximum Continuous Drain Current:
14.5 A
Transistor Material:
Si
Width:
4.52mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
200 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-262
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.1V
Maximum Operating Temperature:
+150 °C
Channel Type:
N
Typical Input Capacitance @ Vds:
840 pF @ 25 V
Length:
10.36mm
Pin Count:
3
Typical Turn-Off Delay Time:
150 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
95 W
Series:
SIPMOS
Maximum Gate Source Voltage:
±20 V
Height:
9.45mm
Typical Turn-On Delay Time:
12 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
200 mΩ
