NXP PMBF170,215 N-channel MOSFET, 300 mA, 60 V, 3-Pin TO-236AB

PMBF170 NXP ,215 N-channel MOSFET, 300 mA, 60 V, 3-Pin TO-236AB
PMBF170
Nexperia

Product Information

Category:
Power MOSFET
Dimensions:
3 x 1.4 x 1mm
Maximum Continuous Drain Current:
300 mA
Transistor Material:
Si
Width:
1.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
2V
Package Type:
TO-236AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Channel Type:
N
Typical Input Capacitance @ Vds:
25 pF@ 10 V
Length:
3mm
Pin Count:
3
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
0.83 W
Maximum Gate Source Voltage:
±20 V
Height:
1mm
Minimum Operating Temperature:
-65 °C
Maximum Drain Source Resistance:
5 Ω
RoHs Compliant
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This is NXP 215 N-channel MOSFET 300 mA 60 V 3-Pin TO-236AB manufactured by Nexperia. The manufacturer part number is PMBF170. It is of power mosfet category . The given dimensions of the product include 3 x 1.4 x 1mm. While 300 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.4mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 2v of maximum gate threshold voltage. The package is a sort of to-236ab. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 25 pf@ 10 v . Its accurate length is 3mm. It contains 3 pins. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 0.83 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. In addition, the height is 1mm. Whereas, the minimum operating temperature of the product is -65 °c. It provides up to 5 ω maximum drain source resistance.

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PMBF170 N-channel enhancement mode field-effect transistor Data Sheet(Technical Reference)

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