Category:
Power MOSFET
Dimensions:
6.73 x 2.38 x 6.22mm
Maximum Continuous Drain Current:
55 A
Transistor Material:
Si
Width:
2.38mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Drain Source Resistance:
20 mΩ
Package Type:
IPAK
Number of Elements per Chip:
1
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
50 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1600 pF @ 25 V
Length:
6.73mm
Pin Count:
3
Forward Transconductance:
23S
Typical Turn-Off Delay Time:
20 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
107 W
Series:
HEXFET
Maximum Gate Source Voltage:
±16 V
Height:
6.22mm
Typical Turn-On Delay Time:
9 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
