Category:
Power MOSFET
Dimensions:
6.6 x 2.3 x 6.1mm
Maximum Continuous Drain Current:
56 A
Transistor Material:
Si
Width:
2.3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
4V
Package Type:
IPAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
69 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2930 pF@ 25 V
Length:
6.6mm
Pin Count:
3
Typical Turn-Off Delay Time:
53 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
140 W
Series:
HEXFET
Maximum Gate Source Voltage:
±20 V
Height:
6.1mm
Typical Turn-On Delay Time:
14 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
18 mΩ
