Category:
Power MOSFET
Dimensions:
6.73 x 6.22 x 2.39mm
Maximum Continuous Drain Current:
110 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
3.7V
Package Type:
DPAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.1V
Maximum Operating Temperature:
175 °C
Typical Gate Charge @ Vgs:
86 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
4360 pF @ 25 V
Length:
6.73mm
Pin Count:
3
Forward Transconductance:
200S
Typical Turn-Off Delay Time:
59 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
140 W
Series:
HEXFET
Maximum Gate Source Voltage:
±20 V
Height:
2.39mm
Typical Turn-On Delay Time:
8.7 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
5.2 mΩ
