Category:
Power MOSFET
Dimensions:
6.73 x 2.39 x 6.22mm
Maximum Continuous Drain Current:
56 A
Transistor Material:
Si
Width:
2.39mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Drain Source Resistance:
12.5 mΩ
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
9.6 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1150 pF @ 15 V
Length:
6.73mm
Pin Count:
3
Forward Transconductance:
71S
Typical Turn-Off Delay Time:
12 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
50 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
6.22mm
Typical Turn-On Delay Time:
8 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1V
