Category:
Power MOSFET
Dimensions:
10.63 x 4.83 x 9.8mm
Maximum Continuous Drain Current:
8.7 A
Transistor Material:
Si
Width:
4.83mm
Transistor Configuration:
Series
Maximum Drain Source Voltage:
150 V
Package Type:
TO-220
Number of Elements per Chip:
2
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
13 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
810 pF @ 25 V
Length:
10.63mm
Pin Count:
5
Forward Transconductance:
11S
Typical Turn-Off Delay Time:
13 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
18 W
Series:
HEXFET
Maximum Gate Source Voltage:
±20 V
Height:
9.8mm
Typical Turn-On Delay Time:
7 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
Maximum Drain Source Resistance:
95 mΩ
