Category:
Power MOSFET
Dimensions:
11 x 5 x 20.5mm
Maximum Continuous Drain Current:
206 A
Transistor Material:
Si
Width:
5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-273AA
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
160 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
7360 pF @ 25 V
Length:
11mm
Pin Count:
3
Typical Turn-Off Delay Time:
72 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
300 W
Series:
HEXFET
Maximum Gate Source Voltage:
±20 V
Height:
20.5mm
Typical Turn-On Delay Time:
17 ns
Minimum Operating Temperature:
-40 °C
Maximum Drain Source Resistance:
3.7 mΩ
