Category:
Power MOSFET
Dimensions:
4.98 x 3.99 x 1.57mm
Maximum Continuous Drain Current:
5.4 A
Transistor Material:
Si
Width:
3.99mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.4V
Package Type:
SOIC
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
4.7 nC @ 4.5 V, 9.1 nC @ 10 V
Channel Type:
P
Typical Input Capacitance @ Vds:
386 pF @ 25 V
Length:
4.98mm
Pin Count:
8
Typical Turn-Off Delay Time:
16 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.5 W
Series:
HEXFET
Maximum Gate Source Voltage:
±20 V
Height:
1.57mm
Typical Turn-On Delay Time:
9.7 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
59 mΩ
