Category:
Power MOSFET
Dimensions:
5.45 x 5.05 x 0.6mm
Maximum Continuous Drain Current:
10.3 A
Transistor Material:
Si
Width:
5.05mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
4.8V
Package Type:
DirectFET MN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.8V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
35 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2210 pF @ 25 V
Length:
5.45mm
Pin Count:
7
Typical Turn-Off Delay Time:
34 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.8 W
Series:
DirectFET, HEXFET
Maximum Gate Source Voltage:
±20 V
Height:
0.6mm
Typical Turn-On Delay Time:
17 ns
Minimum Operating Temperature:
-40 °C
Maximum Drain Source Resistance:
13 mΩ
