Enrgtech

Deliver to

United Kingdom

Categories

Brands

Part Numbers

Top Products

0

Infineon IPD30N06S2L-13 N-channel MOSFET, 30 A, 55 V OptiMOS, 3-Pin TO-252

IPD30N06S2L-13 Infineon  N-channel MOSFET, 30 A, 55 V OptiMOS, 3-Pin TO-252
IPD30N06S2L-13
Infineon

Product Information

Category:
Power MOSFET
Dimensions:
6.73 x 6.22 x 2.41mm
Maximum Continuous Drain Current:
30 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
55 V
Maximum Gate Threshold Voltage:
2V
Maximum Drain Source Resistance:
17 mΩ
Package Type:
TO-252
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
54 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1800 pF @ 25 V
Length:
6.73mm
Pin Count:
3
Typical Turn-Off Delay Time:
33 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
136 W
Series:
OptiMOS
Maximum Gate Source Voltage:
±20 V
Height:
2.41mm
Typical Turn-On Delay Time:
16 ns
Minimum Operating Temperature:
-55 °C
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 30 A 55 V OptiMOS 3-Pin TO-252 manufactured by Infineon. The manufacturer part number is IPD30N06S2L-13. It is of power mosfet category . The given dimensions of the product include 6.73 x 6.22 x 2.41mm. While 30 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.22mm wide. The product offers single transistor configuration. It has a maximum of 55 v drain source voltage. The product carries 2v of maximum gate threshold voltage. It provides up to 17 mω maximum drain source resistance. The package is a sort of to-252. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 54 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 1800 pf @ 25 v . Its accurate length is 6.73mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 33 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 136 w maximum power dissipation. The product optimos, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 2.41mm. In addition, it has a typical 16 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c.

pdf icon
IPD30N06S2L-13 OptiMOS® Power-Transistor Data Sheet(Technical Reference)

Reviews

  • Be the first to review.
Don’t hesitate to ask questions for better clarification.


FAQs

Yes. You can also search IPD30N06S2L-13 on website for other similar products.
We accept all major payment methods for all products including ET14041364. Please check your shopping cart at the time of order.
You can order Infineon brand products with IPD30N06S2L-13 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Unclassified category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon IPD30N06S2L-13 N-channel MOSFET, 30 A, 55 V OptiMOS, 3-Pin TO-252. You can also check on our website or by contacting our customer support team for further order details on Infineon IPD30N06S2L-13 N-channel MOSFET, 30 A, 55 V OptiMOS, 3-Pin TO-252.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14041364 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14041364.
Yes. We ship IPD30N06S2L-13 Internationally to many countries around the world.