Category:
Power MOSFET
Dimensions:
10 x 9.25 x 4.4mm
Maximum Continuous Drain Current:
180 A
Transistor Material:
Si
Width:
9.25mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
2.2V
Package Type:
TO-263
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
220 nC @ 10 V
Channel Type:
P
Typical Input Capacitance @ Vds:
14400 pF @ -25 V
Length:
10mm
Pin Count:
7
Typical Turn-Off Delay Time:
146 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
150 W
Series:
OptiMOS P
Maximum Gate Source Voltage:
±16 V
Height:
4.4mm
Typical Turn-On Delay Time:
32 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
Maximum Drain Source Resistance:
3.9 mΩ
