Category:
Small Signal
Dimensions:
5 x 4 x 1.45mm
Maximum Continuous Drain Current:
2 A, 3 A
Transistor Material:
Si
Width:
4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Package Type:
DSO
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
10.3 nC @ 10 V, 10.5 nC @ 10 V
Channel Type:
N, P
Typical Input Capacitance @ Vds:
275 pF@ 25 V, 320 pF@ 25 V
Length:
5mm
Pin Count:
8
Typical Turn-Off Delay Time:
25 ns, 145 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2 W
Series:
SIPMOS
Maximum Gate Source Voltage:
±20 V
Height:
1.45mm
Typical Turn-On Delay Time:
12 (N) ns, 15 (P) ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
120 mΩ, 300 mΩ
