Category:
Power MOSFET
Dimensions:
6.1 x 5.35 x 1.1mm
Maximum Continuous Drain Current:
10.9 A
Transistor Material:
Si
Width:
5.35mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
250 V
Package Type:
TDSON
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
8.6 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
690 pF @ 100 V
Length:
6.1mm
Pin Count:
8
Forward Transconductance:
14S
Typical Turn-Off Delay Time:
11 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
62.5 W
Series:
OptiMOS 3
Maximum Gate Source Voltage:
±20 V
Height:
1.1mm
Typical Turn-On Delay Time:
6 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
165 mΩ
