Infineon BSC16DN25NS3G N-channel MOSFET, 10.9 A, 250 V OptiMOS 3, 8-Pin TDSON
Product Information
Category:
Power MOSFET
Dimensions:
6.1 x 5.35 x 1.1mm
Maximum Continuous Drain Current:
10.9 A
Transistor Material:
Si
Width:
5.35mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
250 V
Package Type:
TDSON
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
8.6 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
690 pF @ 100 V
Length:
6.1mm
Pin Count:
8
Forward Transconductance:
14S
Typical Turn-Off Delay Time:
11 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
62.5 W
Series:
OptiMOS 3
Maximum Gate Source Voltage:
±20 V
Height:
1.1mm
Typical Turn-On Delay Time:
6 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
165 mΩ
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This is N-channel MOSFET 10.9 A 250 V OptiMOS 3 8-Pin TDSON manufactured by Infineon. The manufacturer part number is BSC16DN25NS3G. It is of power mosfet category . The given dimensions of the product include 6.1 x 5.35 x 1.1mm. While 10.9 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.35mm wide. The product offers single transistor configuration. It has a maximum of 250 v drain source voltage. The package is a sort of tdson. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 8.6 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 690 pf @ 100 v . Its accurate length is 6.1mm. It contains 8 pins. The forward transconductance is 14s . Whereas, its typical turn-off delay time is about 11 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 62.5 w maximum power dissipation. The product optimos 3, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 1.1mm. In addition, it has a typical 6 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 165 mω maximum drain source resistance.
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