ROHM RZF020P01TL P-channel MOSFET, 2 A, 12 V, 3-Pin TUMT
Product Information
Dimensions:
2 x 1.7 x 0.77mm
Maximum Continuous Drain Current:
2 A
Transistor Material:
Si
Width:
1.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
12 V
Maximum Gate Threshold Voltage:
1V
Package Type:
TUMT
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
6.5 nC @ 4.5 V
Channel Type:
P
Typical Input Capacitance @ Vds:
770 pF @ -6 V
Length:
2mm
Pin Count:
3
Typical Turn-Off Delay Time:
65 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
0.8 W
Maximum Gate Source Voltage:
±10 V
Height:
0.77mm
Typical Turn-On Delay Time:
10 ns
Maximum Drain Source Resistance:
440 mΩ
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Yes. We ship RZF020P01TL Internationally to many countries around the world.
This is P-channel MOSFET 2 A 12 V 3-Pin TUMT manufactured by ROHM. The manufacturer part number is RZF020P01TL. The given dimensions of the product include 2 x 1.7 x 0.77mm. While 2 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.7mm wide. The product offers single transistor configuration. It has a maximum of 12 v drain source voltage. The product carries 1v of maximum gate threshold voltage. The package is a sort of tumt. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 6.5 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 770 pf @ -6 v . Its accurate length is 2mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 65 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 0.8 w maximum power dissipation. It features a maximum gate source voltage of ±10 v. In addition, the height is 0.77mm. In addition, it has a typical 10 ns turn-on delay time . It provides up to 440 mω maximum drain source resistance.
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