IRGB4715DPBF Infineon IGBT, 21 A 650 V, 3-Pin TO-220AB

Infineon

Product Information

Dimensions:
10.67 x 4.83 x 16.51mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
100 W
Maximum Continuous Collector Current:
21 A
Maximum Collector Emitter Voltage:
650 V
Height:
16.51mm
Width:
4.83mm
Length:
10.67mm
Maximum Gate Emitter Voltage:
±30V
Package Type:
TO-220AB
Energy Rating:
130µJ
Minimum Operating Temperature:
-40 °C
Switching Speed:
8 → 30kHz
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
Checking for live stock

This is IGBT 21 A 650 V 3-Pin TO-220AB manufactured by Infineon. The manufacturer part number is IRGB4715DPBF. The given dimensions of the product include 10.67 x 4.83 x 16.51mm. The product is available in through hole configuration. Provides up to 100 w maximum power dissipation. The product has a maximum 21 a continuous collector current . Whereas features a 650 v of collector emitter voltage (max). In addition, the height is 16.51mm. Furthermore, the product is 4.83mm wide. Its accurate length is 10.67mm. It offers a maximum ±30v gate emitter voltage . The package is a sort of to-220ab. It has approximately 130µj energy rating . Whereas, the minimum operating temperature of the product is -40 °c. It has about 8 → 30khz switching speed . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration.

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IRGB4715DPbF, IRGS4715DPbF, Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode 650V 15A(Technical Reference)

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