Category:
Power MOSFET
Dimensions:
6 x 5 x 0.9mm
Maximum Continuous Drain Current:
100 A
Width:
5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
9 mΩ
Package Type:
PQFN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
67 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
4340 pF @ 25 V
Length:
6mm
Pin Count:
8
Typical Turn-Off Delay Time:
27 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
250 W
Series:
HEXFET
Maximum Gate Source Voltage:
±20 V
Height:
0.9mm
Typical Turn-On Delay Time:
9 ns
Minimum Operating Temperature:
-55 °C
