Category:
Power MOSFET
Dimensions:
16.03 x 5.16 x 21.1mm
Maximum Continuous Drain Current:
21 A
Transistor Material:
Si
Width:
5.16mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
560 V
Maximum Gate Threshold Voltage:
3.9V
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
95 nC
Channel Type:
N
Typical Input Capacitance @ Vds:
2400 pF@ 25 V
Length:
16.03mm
Pin Count:
3
Forward Transconductance:
18S
Typical Turn-Off Delay Time:
67 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
208 W
Series:
CoolMOS C3
Maximum Gate Source Voltage:
±30 V
Height:
21.1mm
Typical Turn-On Delay Time:
10 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
190 mΩ
