Category:
Power MOSFET
Dimensions:
6.73 x 9.78 x 2.39mm
Maximum Continuous Drain Current:
86 A
Transistor Material:
Si
Width:
9.78mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.25V
Package Type:
IPAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.35V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
17 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2330 pF @ 15 V
Length:
6.73mm
Pin Count:
3
Typical Turn-Off Delay Time:
15 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
79 W
Series:
HEXFET
Maximum Gate Source Voltage:
±20 V
Height:
2.39mm
Typical Turn-On Delay Time:
12 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
8.2 mΩ
