Infineon IRFU3709ZPBF N-channel MOSFET, 86 A, 30 V HEXFET, 3-Pin IPAK
Product Information
Category:
Power MOSFET
Dimensions:
6.73 x 9.78 x 2.39mm
Maximum Continuous Drain Current:
86 A
Transistor Material:
Si
Width:
9.78mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.25V
Package Type:
IPAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.35V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
17 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2330 pF @ 15 V
Length:
6.73mm
Pin Count:
3
Typical Turn-Off Delay Time:
15 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
79 W
Series:
HEXFET
Maximum Gate Source Voltage:
±20 V
Height:
2.39mm
Typical Turn-On Delay Time:
12 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
8.2 mΩ
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This is N-channel MOSFET 86 A 30 V HEXFET 3-Pin IPAK manufactured by Infineon. The manufacturer part number is IRFU3709ZPBF. It is of power mosfet category . The given dimensions of the product include 6.73 x 9.78 x 2.39mm. While 86 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.78mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2.25v of maximum gate threshold voltage. The package is a sort of ipak. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.35v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 17 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 2330 pf @ 15 v . Its accurate length is 6.73mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 15 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 79 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 2.39mm. In addition, it has a typical 12 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 8.2 mω maximum drain source resistance.
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