Category:
Power MOSFET
Dimensions:
10.67 x 4.83 x 9.65mm
Maximum Continuous Drain Current:
85 A
Transistor Material:
Si
Width:
4.83mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
150 V
Maximum Gate Threshold Voltage:
5V
Maximum Drain Source Resistance:
15 mΩ
Package Type:
TO-262
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
71 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
4460 pF @ 50 V
Length:
10.67mm
Pin Count:
3
Typical Turn-Off Delay Time:
25 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
350 W
Series:
HEXFET
Maximum Gate Source Voltage:
±30 V
Height:
9.65mm
Typical Turn-On Delay Time:
18 ns
Minimum Operating Temperature:
-55 °C
