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Infineon IRFSL4115PBF N-channel MOSFET, 195 A, 150 V HEXFET, 3-Pin TO-262

IRFSL4115PBF Infineon  N-channel MOSFET, 195 A, 150 V HEXFET, 3-Pin TO-262
Infineon

Product Information

Category:
Power MOSFET
Dimensions:
10.67 x 15.01 x 4.83mm
Maximum Continuous Drain Current:
195 A
Transistor Material:
Si
Width:
15.01mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
150 V
Maximum Gate Threshold Voltage:
5V
Maximum Drain Source Resistance:
12.1 mΩ
Package Type:
TO-262
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
77 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
5270 pF @ 50 V
Length:
10.67mm
Pin Count:
3
Typical Turn-Off Delay Time:
41 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
375 W
Series:
HEXFET
Maximum Gate Source Voltage:
±20 V
Height:
4.83mm
Typical Turn-On Delay Time:
18 ns
Minimum Operating Temperature:
-55 °C
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 195 A 150 V HEXFET 3-Pin TO-262 manufactured by Infineon. The manufacturer part number is IRFSL4115PBF. It is of power mosfet category . The given dimensions of the product include 10.67 x 15.01 x 4.83mm. While 195 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 15.01mm wide. The product offers single transistor configuration. It has a maximum of 150 v drain source voltage. The product carries 5v of maximum gate threshold voltage. It provides up to 12.1 mω maximum drain source resistance. The package is a sort of to-262. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 77 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 5270 pf @ 50 v . Its accurate length is 10.67mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 41 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 375 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 4.83mm. In addition, it has a typical 18 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c.

pdf icon
Datasheet(Technical Reference)
pdf icon
IRFS4115PbF, IRFSL4115PbF, HEXFET Power MOSFET(Technical Reference)

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FAQs

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You will get a confirmation email regarding your order of Infineon IRFSL4115PBF N-channel MOSFET, 195 A, 150 V HEXFET, 3-Pin TO-262. You can also check on our website or by contacting our customer support team for further order details on Infineon IRFSL4115PBF N-channel MOSFET, 195 A, 150 V HEXFET, 3-Pin TO-262.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET13987793 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET13987793.
Yes. We ship IRFSL4115PBF Internationally to many countries around the world.