Category:
Power MOSFET
Dimensions:
6.73 x 6.22 x 2.39mm
Maximum Continuous Drain Current:
60 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
2.55V
Package Type:
DPAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.65V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
9.3 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1190 pF@ 10 V
Length:
6.73mm
Pin Count:
3
Typical Turn-Off Delay Time:
4.9 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
48 W
Series:
HEXFET
Maximum Gate Source Voltage:
±20 V
Height:
2.39mm
Typical Turn-On Delay Time:
41 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
8 mΩ
