Category:
Power MOSFET
Dimensions:
3.05 x 3.05 x 0.91mm
Maximum Continuous Drain Current:
5.7 A
Transistor Material:
Si
Width:
3.05mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Package Type:
Micro
Number of Elements per Chip:
1
Maximum Operating Temperature:
150 °C
Typical Gate Charge @ Vgs:
14 nC @ 16 V
Channel Type:
N
Typical Input Capacitance @ Vds:
650 pF @ 15 V
Length:
3.05mm
Pin Count:
8
Forward Transconductance:
6.1S
Typical Turn-Off Delay Time:
24 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.8 W
Series:
HEXFET
Maximum Gate Source Voltage:
±12 V
Height:
0.91mm
Typical Turn-On Delay Time:
5.1 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
50 mΩ
