Infineon IRF7601TRPBF N-channel MOSFET, 5.7 A, 20 V HEXFET, 8-Pin Micro
Product Information
Category:
Power MOSFET
Dimensions:
3.05 x 3.05 x 0.91mm
Maximum Continuous Drain Current:
5.7 A
Transistor Material:
Si
Width:
3.05mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Package Type:
Micro
Number of Elements per Chip:
1
Maximum Operating Temperature:
150 °C
Typical Gate Charge @ Vgs:
14 nC @ 16 V
Channel Type:
N
Typical Input Capacitance @ Vds:
650 pF @ 15 V
Length:
3.05mm
Pin Count:
8
Forward Transconductance:
6.1S
Typical Turn-Off Delay Time:
24 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.8 W
Series:
HEXFET
Maximum Gate Source Voltage:
±12 V
Height:
0.91mm
Typical Turn-On Delay Time:
5.1 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
50 mΩ
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Yes. We ship IRF7601PBF Internationally to many countries around the world.
This is IRF7601TRPBF N-channel MOSFET 5.7 A 20 V HEXFET 8-Pin Micro manufactured by Infineon. The manufacturer part number is IRF7601PBF. It is of power mosfet category . The given dimensions of the product include 3.05 x 3.05 x 0.91mm. While 5.7 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.05mm wide. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. The package is a sort of micro. It consists of 1 elements per chip. It has a maximum operating temperature of 150 °c. With a typical gate charge at Vgs includes 14 nc @ 16 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 650 pf @ 15 v . Its accurate length is 3.05mm. It contains 8 pins. The forward transconductance is 6.1s . Whereas, its typical turn-off delay time is about 24 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.8 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of ±12 v. In addition, the height is 0.91mm. In addition, it has a typical 5.1 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 50 mω maximum drain source resistance.
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