Category:
Power MOSFET
Dimensions:
10.58 x 10.1 x 2.4mm
Maximum Continuous Drain Current:
300 A
Transistor Material:
Si
Width:
10.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Package Type:
HSOF
Number of Elements per Chip:
1
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
156 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
11200 pF @ 50 V
Length:
10.58mm
Pin Count:
8
Forward Transconductance:
250S
Typical Turn-Off Delay Time:
84 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
375 W
Series:
OptiMOS 3
Maximum Gate Source Voltage:
±20 V
Height:
2.4mm
Typical Turn-On Delay Time:
34 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1V
Maximum Drain Source Resistance:
3.7 mΩ
