Category:
Power MOSFET
Dimensions:
6.73 x 2.39 x 6.22mm
Maximum Continuous Drain Current:
90 A
Transistor Material:
Si
Width:
2.39mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.2V
Package Type:
TO-251
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
18 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2990 pF @ 15 V
Length:
6.73mm
Pin Count:
3
Forward Transconductance:
89S
Typical Turn-Off Delay Time:
27 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
79 W
Series:
OptiMOS 3
Maximum Gate Source Voltage:
±20 V
Height:
6.22mm
Typical Turn-On Delay Time:
7.4 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.1V
Maximum Drain Source Resistance:
5.9 mΩ
