Category:
Power MOSFET
Dimensions:
10.363 x 4.572 x 11.177mm
Maximum Continuous Drain Current:
80 A
Transistor Material:
Si
Width:
4.572mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
TO-262
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
42 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2990 pF @ 50 V
Length:
10.36mm
Pin Count:
3
Forward Transconductance:
89S
Typical Turn-Off Delay Time:
31 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
125 W
Series:
OptiMOS 3
Maximum Gate Source Voltage:
±20 V
Height:
11.177mm
Typical Turn-On Delay Time:
18 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
15.4 mΩ
