Category:
Power MOSFET
Dimensions:
6.731 x 6.223 x 2.413mm
Maximum Continuous Drain Current:
9 A
Transistor Material:
Si
Width:
6.223mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
550 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
TO-252
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
17 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
890 pF @ 100 V
Length:
6.73mm
Pin Count:
3
Typical Turn-Off Delay Time:
80 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
83 W
Series:
CoolMOS CP
Maximum Gate Source Voltage:
±30 V
Height:
2.413mm
Typical Turn-On Delay Time:
35 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
900 mΩ
