Infineon BSZ22DN20NS3G N-channel MOSFET, 7 A, 200 V OptiMOS 3, 8-Pin TDSON
Product Information
Category:
Power MOSFET
Dimensions:
3.4 x 3.4 x 1.1mm
Maximum Continuous Drain Current:
7 A
Transistor Material:
Si
Width:
3.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
200 V
Package Type:
TDSON
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
4.2 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
320 pF @ 100 V
Length:
3.4mm
Pin Count:
8
Forward Transconductance:
7S
Typical Turn-Off Delay Time:
6 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
34 W
Series:
OptiMOS 3
Maximum Gate Source Voltage:
±20 V
Height:
1.1mm
Typical Turn-On Delay Time:
4 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
225 mΩ
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This is N-channel MOSFET 7 A 200 V OptiMOS 3 8-Pin TDSON manufactured by Infineon. The manufacturer part number is BSZ22DN20NS3G. It is of power mosfet category . The given dimensions of the product include 3.4 x 3.4 x 1.1mm. While 7 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.4mm wide. The product offers single transistor configuration. It has a maximum of 200 v drain source voltage. The package is a sort of tdson. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 4.2 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 320 pf @ 100 v . Its accurate length is 3.4mm. It contains 8 pins. The forward transconductance is 7s . Whereas, its typical turn-off delay time is about 6 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 34 w maximum power dissipation. The product optimos 3, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 1.1mm. In addition, it has a typical 4 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 225 mω maximum drain source resistance.
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