Infineon BSS806NH6327XT N-channel MOSFET, 2.3 A, 20 V OptiMOS 2, 3-Pin SOT-23

BSS806N Infineon H6327XT N-channel MOSFET, 2.3 A, 20 V OptiMOS 2, 3-Pin SOT-23
Infineon

Product Information

Category:
Small Signal
Dimensions:
2.9 x 1.3 x 1mm
Maximum Continuous Drain Current:
2.3 A
Transistor Material:
Si
Width:
1.3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
0.75V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.3V
Maximum Operating Temperature:
150 °C
Typical Gate Charge @ Vgs:
1.7 nC @ 2.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
370 pF @ 10 V
Length:
2.9mm
Pin Count:
3
Typical Turn-Off Delay Time:
12 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
0.5 W
Series:
OptiMOS 2
Maximum Gate Source Voltage:
±8 V
Height:
1mm
Typical Turn-On Delay Time:
7.5 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
82 mΩ
RoHs Compliant
Checking for live stock

This is H6327XT N-channel MOSFET 2.3 A 20 V OptiMOS 2 3-Pin SOT-23 manufactured by Infineon. The manufacturer part number is BSS806N. It is of small signal category . The given dimensions of the product include 2.9 x 1.3 x 1mm. While 2.3 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.3mm wide. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 0.75v of maximum gate threshold voltage. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.3v. It has a maximum operating temperature of 150 °c. With a typical gate charge at Vgs includes 1.7 nc @ 2.5 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 370 pf @ 10 v . Its accurate length is 2.9mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 12 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 0.5 w maximum power dissipation. The product optimos 2, is a highly preferred choice for users. It features a maximum gate source voltage of ±8 v. In addition, the height is 1mm. In addition, it has a typical 7.5 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 82 mω maximum drain source resistance.

pdf icon
BSS806N OptiMOS 2 Small Signal Transistor Data Sheet(Technical Reference)

Reviews

  • Be the first to review.

FAQs

Yes. We ship BSS806N Internationally to many countries around the world.
Yes. You can also search BSS806N on website for other similar products.
We accept all major payment methods for all products including ET13987539. Please check your shopping cart at the time of order.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET13987539 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search"Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET13987539.
You can order Infineon brand products with BSS806N directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Unclassified category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon BSS806NH6327XT N-channel MOSFET, 2.3 A, 20 V OptiMOS 2, 3-Pin SOT-23. You can also check on our website or by contacting our customer support team for further order details on Infineon BSS806NH6327XT N-channel MOSFET, 2.3 A, 20 V OptiMOS 2, 3-Pin SOT-23.