Category:
Power MOSFET
Dimensions:
10.75 x 4.85 x 16.13mm
Maximum Continuous Drain Current:
58 A
Transistor Material:
Si
Width:
4.85mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
55 V
Package Type:
TO-220FP
Number of Elements per Chip:
1
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
130 nC @ 5 V
Board Level Components:
Y
Channel Type:
N
Typical Input Capacitance @ Vds:
5000 pF @ 25 V
Length:
10.75mm
Pin Count:
3
Forward Transconductance:
59S
Typical Turn-Off Delay Time:
43 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
63 W
Series:
HEXFET
Maximum Gate Source Voltage:
±16 V
Height:
16.13mm
Typical Turn-On Delay Time:
12 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
Maximum Drain Source Resistance:
13 mΩ
