Category:
Power MOSFET
Dimensions:
10.66 x 4.82 x 16.51mm
Maximum Continuous Drain Current:
87 A
Transistor Material:
Si
Width:
4.82mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
36 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2150 pF@ 25 V
Length:
10.66mm
Pin Count:
3
Typical Turn-Off Delay Time:
24 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
143 W
Series:
HEXFET
Maximum Gate Source Voltage:
±20 V
Height:
16.51mm
Typical Turn-On Delay Time:
9.9 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
9.2 mΩ
