Category:
Power MOSFET
Dimensions:
10.31 x 11.05 x 4.57mm
Maximum Continuous Drain Current:
21 A
Transistor Material:
Si
Width:
11.05mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Package Type:
PG-TO-263
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
87 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2400 pF @ 25 V
Length:
10.31mm
Pin Count:
3
Typical Turn-Off Delay Time:
67 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
208 W
Series:
CoolMOS C3
Maximum Gate Source Voltage:
±20 V
Height:
4.57mm
Typical Turn-On Delay Time:
10 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
190 mΩ
This is N-channel MOSFET 21 A 650 V CoolMOS C3 3-Pin PG-TO-263 manufactured by Infineon. The manufacturer part number is SPB20N60C3. It is of power mosfet category . The given dimensions of the product include 10.31 x 11.05 x 4.57mm. While 21 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 11.05mm wide. The product offers single transistor configuration. It has a maximum of 650 v drain source voltage. The package is a sort of pg-to-263. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 87 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 2400 pf @ 25 v . Its accurate length is 10.31mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 67 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 208 w maximum power dissipation. The product coolmos c3, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 4.57mm. In addition, it has a typical 10 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 190 mω maximum drain source resistance.
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