Category:
Power MOSFET
Dimensions:
10.67 x 4.83 x 9.65mm
Maximum Continuous Drain Current:
160 A
Transistor Material:
Si
Width:
4.83mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Package Type:
D2PAK
Number of Elements per Chip:
1
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
140 nC @ 5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
6600 pF @ 25 V
Length:
10.67mm
Pin Count:
3
Forward Transconductance:
93S
Typical Turn-Off Delay Time:
38 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
200 W
Series:
HEXFET
Maximum Gate Source Voltage:
±20 V
Height:
9.65mm
Typical Turn-On Delay Time:
18 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
Maximum Drain Source Resistance:
4 mΩ
