Category:
Power MOSFET
Maximum Continuous Drain Current:
105 A
Transistor Configuration:
Single
Maximum Drain Source Voltage:
150 V
Maximum Gate Threshold Voltage:
5V
Maximum Drain Source Resistance:
12 mΩ
Package Type:
D2PAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
73 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
5320 pF @ 50 V
Pin Count:
7
Typical Turn-Off Delay Time:
37 ns
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
380 W
Series:
HEXFET
Maximum Gate Source Voltage:
±20 V
Height:
4.55mm
Typical Turn-On Delay Time:
18 ns
Minimum Operating Temperature:
-55 °C
