Category:
Power MOSFET
Dimensions:
2.1 x 2.1 x 0.95mm
Maximum Continuous Drain Current:
8.8 A
Width:
2.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.35V
Maximum Drain Source Resistance:
25 mΩ
Package Type:
PQFN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.35V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
8.7 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
600 pF @ 25 V
Length:
2.1mm
Pin Count:
7
Typical Turn-Off Delay Time:
5.2 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.1 W
Series:
HEXFET
Maximum Gate Source Voltage:
±20 V
Height:
0.95mm
Typical Turn-On Delay Time:
5.9 ns
Minimum Operating Temperature:
-55 °C
