Category:
Power MOSFET
Dimensions:
10 x 4.4 x 15.65mm
Maximum Continuous Drain Current:
80 A
Transistor Material:
Si
Width:
4.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
3.7 mΩ
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
127 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
5300 pF @ 25 V
Length:
10mm
Pin Count:
3
Typical Turn-Off Delay Time:
56 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
300 W
Series:
OptiMOS
Maximum Gate Source Voltage:
±20 V
Height:
15.65mm
Typical Turn-On Delay Time:
26 ns
Minimum Operating Temperature:
-55 °C
This is N-channel MOSFET 80 A 40 V OptiMOS 3-Pin TO-220 manufactured by Infineon. The manufacturer part number is IPP80N04S2-04. It is of power mosfet category . The given dimensions of the product include 10 x 4.4 x 15.65mm. While 80 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.4mm wide. The product offers single transistor configuration. It has a maximum of 40 v drain source voltage. The product carries 4v of maximum gate threshold voltage. It provides up to 3.7 mω maximum drain source resistance. The package is a sort of to-220. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.1v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 127 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 5300 pf @ 25 v . Its accurate length is 10mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 56 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 300 w maximum power dissipation. The product optimos, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 15.65mm. In addition, it has a typical 26 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c.
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