Category:
Power MOSFET
Dimensions:
10.31 x 9.45 x 4.57mm
Maximum Continuous Drain Current:
50 A
Transistor Material:
Si
Width:
9.45mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.2V
Package Type:
PG-TO-263-3
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
15 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2400 pF @ 15 V
Length:
10.31mm
Pin Count:
2+Tab
Forward Transconductance:
75S
Typical Turn-Off Delay Time:
25 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
68 W
Series:
OptiMOS 3
Maximum Gate Source Voltage:
±20 V
Height:
4.57mm
Typical Turn-On Delay Time:
6.7 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.1V
Maximum Drain Source Resistance:
7.8 mΩ
