Category:
Power MOSFET
Dimensions:
10.65 x 4.9 x 16.15mm
Maximum Continuous Drain Current:
7.6 A
Transistor Material:
Si
Width:
4.9mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
550 V
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
18.7 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
433 pF @ 100 V
Length:
10.65mm
Pin Count:
3
Typical Turn-Off Delay Time:
30 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
28 W
Series:
CoolMOS CE
Maximum Gate Source Voltage:
±30 V
Height:
16.15mm
Typical Turn-On Delay Time:
6 ns
Minimum Operating Temperature:
-40 °C
Forward Diode Voltage:
0.85V
Maximum Drain Source Resistance:
500 mΩ
