Category:
Power MOSFET
Dimensions:
6.1 x 5.35 x 1.1mm
Maximum Continuous Drain Current:
100 A
Transistor Material:
Si
Width:
5.35mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
25 V
Package Type:
TDSON
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
31 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
4700 pF @ 12 V
Length:
6.1mm
Pin Count:
8
Forward Transconductance:
170S
Typical Turn-Off Delay Time:
34 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
96 W
Series:
OptiMOS
Maximum Gate Source Voltage:
±20 V
Height:
1.1mm
Typical Turn-On Delay Time:
6.7 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1V
Maximum Drain Source Resistance:
1.3 mΩ
