Infineon BF 5030W H6327 N-channel MOSFET, 25 mA, 8 V Depletion, 4-Pin SOT-343

BF-5030W-H6327 Infineon BF 5030W H6327 N-channel MOSFET, 25 mA, 8 V Depletion, 4-Pin SOT-343
Infineon

Product Information

Category:
MOSFET Tetrode
Dimensions:
2 x 1.25 x 0.9mm
Maximum Continuous Drain Current:
25 mA
Transistor Material:
Si
Width:
1.25mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
8 V
Package Type:
SOT-343
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Channel Type:
N
Typical Input Capacitance @ Vds:
2.8 pF @ 5 V
Length:
2mm
Typical Power Gain:
34 dB
Pin Count:
4
Forward Transconductance:
0.041S
Mounting Type:
Surface Mount
Channel Mode:
Depletion
Maximum Power Dissipation:
0.2 W
Maximum Gate Source Voltage:
±6 V
Height:
0.9mm
RoHs Compliant
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This is N-channel MOSFET 25 mA 8 V Depletion 4-Pin SOT-343 manufactured by Infineon. The manufacturer part number is BF 5030W H6327. It is of mosfet tetrode category . The given dimensions of the product include 2 x 1.25 x 0.9mm. While 25 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.25mm wide. The product offers single transistor configuration. It has a maximum of 8 v drain source voltage. The package is a sort of sot-343. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 2.8 pf @ 5 v . Its accurate length is 2mm. It has about 34 db typical power gain . It contains 4 pins. The forward transconductance is 0.041s . The product is available in surface mount configuration. The product carries depletion channel mode. Provides up to 0.2 w maximum power dissipation. It features a maximum gate source voltage of ±6 v. In addition, the height is 0.9mm.

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BF5030 Silicon N-Channel MOSFET Tetrode(Technical Reference)

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