Category:
Power MOSFET
Dimensions:
15.87 x 5.31 x 20.7mm
Maximum Continuous Drain Current:
160 A
Transistor Material:
Si
Width:
5.31mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
55 V
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
5.3 mΩ
Package Type:
TO-247AC
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
120 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
5600 pF@ 25 V
Length:
15.87mm
Pin Count:
3
Typical Turn-Off Delay Time:
140 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
310 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
20.7mm
Typical Turn-On Delay Time:
12 ns
Minimum Operating Temperature:
-55 °C
