Fuji Electric 6MBI75VA-060-50, M636 3 Phase Bridge IGBT Module, 75 A max, 600 V, Through Hole
Product Information
Configuration:
3 Phase Bridge
Dimensions:
107.5 x 45 x 17mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
275 W
Maximum Continuous Collector Current:
75 A
Maximum Collector Emitter Voltage:
600 V
Height:
17mm
Width:
45mm
Length:
107.5mm
Maximum Gate Emitter Voltage:
±20V
Package Type:
M636
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
28
Transistor Configuration:
3 Phase
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This is M636 3 Phase Bridge IGBT Module 75 A max 600 V Through Hole manufactured by Fuji Electric. The manufacturer part number is 6MBI75VA-060-50. The product is available in 3 phase bridge configuration. The given dimensions of the product include 107.5 x 45 x 17mm. The product is available in through hole configuration. Provides up to 275 w maximum power dissipation. The product has a maximum 75 a continuous collector current . Whereas features a 600 v of collector emitter voltage (max). In addition, the height is 17mm. Furthermore, the product is 45mm wide. Its accurate length is 107.5mm. It offers a maximum ±20v gate emitter voltage . The package is a sort of m636. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 28 pins. The product offers 3 phase transistor configuration.
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