Category:
Power MOSFET
Dimensions:
5 x 4 x 1.5mm
Maximum Continuous Drain Current:
7.6 A, 11 A
Width:
4mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.25V
Maximum Drain Source Resistance:
11 mΩ, 16 mΩ
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1.35V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
7.5 nC @ 4.5 V, 14 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
910 pF @ 15 V (Transistor 1), 1780 pF @ 15 V (Transistor 2)
Length:
5mm
Pin Count:
8
Typical Turn-Off Delay Time:
10 (Transistor 1) ns, 15 (Transistor 2) ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.4 W
Series:
HEXFET
Maximum Gate Source Voltage:
±20 V
Height:
1.5mm
Typical Turn-On Delay Time:
6.9 (Transistor 1) ns, 7.8 (Transistor 2) ns
Minimum Operating Temperature:
-55 °C
