Category:
Power MOSFET
Dimensions:
6.15 x 5.15 x 1mm
Maximum Continuous Drain Current:
123 A
Transistor Material:
Si
Width:
5.15mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
3.6V
Package Type:
PQFN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
36 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2320 pF @ 50 V
Length:
6.15mm
Pin Count:
8
Forward Transconductance:
117S
Typical Turn-Off Delay Time:
14 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
160 W
Series:
HEXFET
Maximum Gate Source Voltage:
±20 V
Height:
1mm
Typical Turn-On Delay Time:
6.5 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
Maximum Drain Source Resistance:
5.2 mΩ
